Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory

  • Yoon, Gilsang
  • Ko, Donghyun
  • Park, Jounghun
  • Kim, Donghwi
  • Kim, Jungsik
  • 외 1명
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초록

The quantitative characteristics of traps created in the bandgap-engineered tunneling oxide (BE-TOX) layer and block layer after program/erase (P/E) stress-cycling in a 3D NAND flash memory were investigated. The trap spectroscopy by charge injection and sensing technique was used to obtain the distribution of traps in these layers. In the BE-TOX layer, significant traps were generated around 1.3 eV in the nitrogen-doped layer (N1) and increased by 48% in the fresh cell after P/E stress-cycling. The H bonds in the N1 are more likely to break during the stress-cycling and create neutral equivalent to SiO center dot traps. In the block layer, however, trap generation was negligible after stress-cycling.

키워드

3D NAND flash memorybandgap-engineered tunnelingprogramerase cyclingtrap profileTSCISELECTRON TRAPOXYNITRIDETEMPERATUREDEFECTS
제목
Impact of P/E Stress on Trap Profiles in Bandgap-Engineered Tunneling Oxide of 3D NAND Flash Memory
저자
Yoon, GilsangKo, DonghyunPark, JounghunKim, DonghwiKim, JungsikLee, Jeong-Soo
DOI
10.1109/ACCESS.2022.3182397
발행일
2022-06
유형
Article
저널명
IEEE Access
10
페이지
62423 ~ 62428