ScholarWorks@경상국립대학교

초록

Trap profiles in the bandgap-engineered tunneling oxide (BE-TOX) layer of a 3D NAND flash memory were investigated using a transient current trap spectroscopy technique. A new pulse scheme was introduced to generate channel holes and subsequently analyze the hole traps in the BE-TOX layer. In the fresh cell, the hole traps were primarily located at a trap energy level (ET) of 1.1 eV, whereas the electron traps exhibited two distinct peaks at ET = 0.75 and 1.25 eV. With increasing program/erase (P/E) cycling operations, the peak ET associated with hole traps shifted toward shallower levels. Conversely, the electron traps remained unchanged, although their intensities increased. The extracted trap generation exhibited the power-law characteristics. © 2002-2012 IEEE.

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