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Sensitivity optimization by controlling channel thickness of junctionless transistor-based chemical sensors

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dc.contributor.authorJeon, Dae-Young-
dc.date.accessioned2025-08-06T06:00:09Z-
dc.date.available2025-08-06T06:00:09Z-
dc.date.issued2025-09-
dc.identifier.issn1071-1023-
dc.identifier.issn2166-2746-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/79620-
dc.description.abstractJunctionless transistors (JLTs) offer a promising avenue for future technological advancements due to their simplified design, absence of p-n junctions, and capability for bulk-conduction operation. These devices also show potential for creating cost-effective and energy-efficient sensors. This study examines the performance of JLT-based sensors with three-dimensional structures, focusing on how channel geometry affects their functionality through numerical simulations. In particular, a method on how to optimize sensing performance based on the unique operating mechanism of JLTs was investigated for the first time. Optimal sensing performance is achieved when the channel thickness of JLTs is comparable to the maximum depletion width at a specific channel doping concentration. These findings provide valuable insights for optimizing JLT-based sensor performance and offer practical guidelines for developing high-performance sensors.-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Institute of Physics-
dc.titleSensitivity optimization by controlling channel thickness of junctionless transistor-based chemical sensors-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1116/6.0004586-
dc.identifier.scopusid2-s2.0-105011844112-
dc.identifier.wosid001538280400002-
dc.identifier.bibliographicCitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.43, no.5-
dc.citation.titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures-
dc.citation.volume43-
dc.citation.number5-
dc.type.docTypeLetter-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusNANOWIRE TRANSISTORS-
dc.subject.keywordAuthorCost Effectiveness-
dc.subject.keywordAuthorEnergy Efficiency-
dc.subject.keywordAuthorOptimization-
dc.subject.keywordAuthorSemiconductor Junctions-
dc.subject.keywordAuthorBulk Conduction-
dc.subject.keywordAuthorChannel Thickness-
dc.subject.keywordAuthorCost Effective-
dc.subject.keywordAuthorEnergy Efficient-
dc.subject.keywordAuthorJunctionless Transistors-
dc.subject.keywordAuthorP-n Junction-
dc.subject.keywordAuthorPerformance-
dc.subject.keywordAuthorSensing Performance-
dc.subject.keywordAuthorSensitivity Optimization-
dc.subject.keywordAuthorTechnological Advancement-
dc.subject.keywordAuthorChemical Sensors-
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