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Sensitivity optimization by controlling channel thickness of junctionless transistor-based chemical sensors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Dae-Young | - |
| dc.date.accessioned | 2025-08-06T06:00:09Z | - |
| dc.date.available | 2025-08-06T06:00:09Z | - |
| dc.date.issued | 2025-09 | - |
| dc.identifier.issn | 1071-1023 | - |
| dc.identifier.issn | 2166-2746 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/79620 | - |
| dc.description.abstract | Junctionless transistors (JLTs) offer a promising avenue for future technological advancements due to their simplified design, absence of p-n junctions, and capability for bulk-conduction operation. These devices also show potential for creating cost-effective and energy-efficient sensors. This study examines the performance of JLT-based sensors with three-dimensional structures, focusing on how channel geometry affects their functionality through numerical simulations. In particular, a method on how to optimize sensing performance based on the unique operating mechanism of JLTs was investigated for the first time. Optimal sensing performance is achieved when the channel thickness of JLTs is comparable to the maximum depletion width at a specific channel doping concentration. These findings provide valuable insights for optimizing JLT-based sensor performance and offer practical guidelines for developing high-performance sensors. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | Sensitivity optimization by controlling channel thickness of junctionless transistor-based chemical sensors | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1116/6.0004586 | - |
| dc.identifier.scopusid | 2-s2.0-105011844112 | - |
| dc.identifier.wosid | 001538280400002 | - |
| dc.identifier.bibliographicCitation | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.43, no.5 | - |
| dc.citation.title | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | - |
| dc.citation.volume | 43 | - |
| dc.citation.number | 5 | - |
| dc.type.docType | Letter | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | NANOWIRE TRANSISTORS | - |
| dc.subject.keywordAuthor | Cost Effectiveness | - |
| dc.subject.keywordAuthor | Energy Efficiency | - |
| dc.subject.keywordAuthor | Optimization | - |
| dc.subject.keywordAuthor | Semiconductor Junctions | - |
| dc.subject.keywordAuthor | Bulk Conduction | - |
| dc.subject.keywordAuthor | Channel Thickness | - |
| dc.subject.keywordAuthor | Cost Effective | - |
| dc.subject.keywordAuthor | Energy Efficient | - |
| dc.subject.keywordAuthor | Junctionless Transistors | - |
| dc.subject.keywordAuthor | P-n Junction | - |
| dc.subject.keywordAuthor | Performance | - |
| dc.subject.keywordAuthor | Sensing Performance | - |
| dc.subject.keywordAuthor | Sensitivity Optimization | - |
| dc.subject.keywordAuthor | Technological Advancement | - |
| dc.subject.keywordAuthor | Chemical Sensors | - |
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