Direct Microscale Periodic Surface Structuring on Zinc-Blende Crystal Semiconductor via a Facile Cracking Method

Abstract

In this study, we introduce a microscale periodic surface structuring on (100)-oriented GaAs semiconductor substrates via a controlled cracking technology. This method circumvents the need for costly photolithography and etching, enabling the direct formation of highly periodic microscale V-shaped groove structures on GaAs substrates. By systematically varying the thickness of the tensile-stressed Ni stressor layer of the controlled cracking process, we achieved precise control over the morphology of the groove structures, including their pitch, amplitude, and inclination angle. Density functional theory (DFT) calculations were employed to investigate the critical energy release rates across various crystalline planes, providing valuable insights into the modifications observed in the fracture structures. Optical simulations demonstrated that the inclination angle is the predominant factor influencing the optical reflection, while the pitch of the groove structure exerts a minimal effect. Furthermore, pronounced anisotropic wetting properties were observed on the spalled GaAs substrates with the degree of anisotropy enhanced by increasing the dimensions of the V-shaped grooves. This cracking-assisted surface structuring method constitutes a significant advancement over traditional patterning techniques, offering a cost-effective and efficient strategy for surface structuring with broad potential applications in optoelectronics and wetting-related technologies.