A D Band Low-Noise and High-Gain Receiver Front-End Adopting Gmax-Driven Active Mixer
- Authors
- Choi, Kyung-Sik; Lee, Hokeun; Yun, Byeonghun; Lee, Sang-Gug
- Issue Date
- Sep-2024
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Iron; Mixers; Array signal processing; Radio frequency; Noise measurement; Gain; Transistors; Active mixer; beamforming; CMOS; G(max); low-noise amplifier (LNA); receiver (RX); sub-terahertz (THz)
- Citation
- IEEE Transactions on Microwave Theory and Techniques, v.72, no.9, pp 5576 - 5587
- Pages
- 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Transactions on Microwave Theory and Techniques
- Volume
- 72
- Number
- 9
- Start Page
- 5576
- End Page
- 5587
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/77436
- DOI
- 10.1109/TMTT.2024.3377612
- ISSN
- 0018-9480
1557-9670
- Abstract
- Phased-array systems are extensively utilized in wireless transmission and reception links operating at frequencies above 100 GHz to compensate for significant path loss. Regardless of beamforming architectures, the low-power implementation of a high-gain and low-noise receiver (RX) front-end (FE) plays a crucial role in large-scale RX arrays to maintain link margin. This article presents a 154 GHz low-power, high-gain, and low-noise CMOS RX FE adopting a proposed active mixer driven by a g(m) -stage based on a G(max ) -core. To ensure high-gain and low-noise characteristics, a two-stage low-noise amplifier (LNA) is implemented using the G(max ) gain boosting technique, while its first stage features a simultaneous noise-and input-matched G(max ) -core. The proposed active mixer consists of the G(max ) -based g(m) -stage and switching stages. The g(m) -stage driving the switching stage is realized using the G(max )-core to enhance the gain and stability efficiently. To further increase the RX gain, a conjugate matching network is introduced between the g(m)-and switching stages, which is verified by a comprehensive analysis compared to previously reported techniques. Implemented in a 65-nm CMOS process, the proposed RX FE achieves a peak conversion gain of 28.5 dB and a minimum noise figure (NF) of 7.5 dB while operating under a low dc power of only 21.8 mW.
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