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미사일 발사대 유도전동기 제어를 위한 모듈 개발Development of Insulated Gate Bipolar Transistor Module for Missile

Other Titles
Development of Insulated Gate Bipolar Transistor Module for Missile
Authors
서세욱최승찬김갑순
Issue Date
Dec-2024
Publisher
한국기계가공학회
Keywords
IGBT Module(절연 게이트 양극성 트랜지스터 모듈); Three-phase Inverter(3상 인버터); Regenerativ Braking(회생제동); EMI Reduction(전자기파 간섭 저감)
Citation
한국기계가공학회지, v.23, no.12, pp 30 - 37
Pages
8
Indexed
KCI
Journal Title
한국기계가공학회지
Volume
23
Number
12
Start Page
30
End Page
37
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/75341
DOI
10.14775/ksmpe.2024.23.12.030
ISSN
1598-6721
2288-0771
Abstract
In this study, we designed and fabricated an insulated gate bipolar transistor (IGBT) module to control missilelauncher induction motors. This IGBT module was designed to receive digital voltage-level switching signalsfrom a microcontroller, thereby converting them into IGBT gate signals to operate the three-phase inverter of thebuilt-in 7-pack IGBT. In addition, an IGBT driver module was used to drive the regenerative braking IGBT, andsmoothing capacitors were applied to the DC link power rectified from the three-phase AC power, along withsnubber capacitors to prevent surge power from high-capacity IGBT switching signals and reduce EMI. Thismodule also included sensors to monitor the phase current and DC-link voltage for the control of the three-phaseinduction motor. The fabricated IGBT module was tested along with the IGBT driver module, and theexperimental results confirmed the smooth operation of the module. Therefore, the proposed IGBT module canbe effectively applied to motor controllers for missile launcher induction motor control.
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공학계열 > 융합기계공학과 > Journal Articles

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