미사일 발사대 유도전동기 제어를 위한 모듈 개발Development of Insulated Gate Bipolar Transistor Module for Missile
- Other Titles
- Development of Insulated Gate Bipolar Transistor Module for Missile
- Authors
- 서세욱; 최승찬; 김갑순
- Issue Date
- Dec-2024
- Publisher
- 한국기계가공학회
- Keywords
- IGBT Module(절연 게이트 양극성 트랜지스터 모듈); Three-phase Inverter(3상 인버터); Regenerativ Braking(회생제동); EMI Reduction(전자기파 간섭 저감)
- Citation
- 한국기계가공학회지, v.23, no.12, pp 30 - 37
- Pages
- 8
- Indexed
- KCI
- Journal Title
- 한국기계가공학회지
- Volume
- 23
- Number
- 12
- Start Page
- 30
- End Page
- 37
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/75341
- DOI
- 10.14775/ksmpe.2024.23.12.030
- ISSN
- 1598-6721
2288-0771
- Abstract
- In this study, we designed and fabricated an insulated gate bipolar transistor (IGBT) module to control missilelauncher induction motors. This IGBT module was designed to receive digital voltage-level switching signalsfrom a microcontroller, thereby converting them into IGBT gate signals to operate the three-phase inverter of thebuilt-in 7-pack IGBT. In addition, an IGBT driver module was used to drive the regenerative braking IGBT, andsmoothing capacitors were applied to the DC link power rectified from the three-phase AC power, along withsnubber capacitors to prevent surge power from high-capacity IGBT switching signals and reduce EMI. Thismodule also included sensors to monitor the phase current and DC-link voltage for the control of the three-phaseinduction motor. The fabricated IGBT module was tested along with the IGBT driver module, and theexperimental results confirmed the smooth operation of the module. Therefore, the proposed IGBT module canbe effectively applied to motor controllers for missile launcher induction motor control.
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Collections - 공학계열 > 융합기계공학과 > Journal Articles

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