Facile synthesis of iodine variants-incorporated lithium perrhenate crystal and film: Resistive switching device and synaptic behavior
- Authors
- Lee, Sojeong; Ahn, Jong-Guk; Jang, Eejin; Hyun, Gyeongeun; Kim, Jinho; Kim, Hyeonju; Park, Jumin; Song, Intek; Lim, Hyunseob; Yoon, Seok Min
- Issue Date
- Oct-2024
- Publisher
- Elsevier BV
- Keywords
- Artificial synapse; Iodine variants; Lithium perrhenate; Memristor; Rhenium oxides
- Citation
- Journal of Alloys and Compounds, v.1002
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Alloys and Compounds
- Volume
- 1002
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/71290
- DOI
- 10.1016/j.jallcom.2024.175423
- ISSN
- 0925-8388
1873-4669
- Abstract
- This study investigates the integration of iodine as a dopant into lithium perrhenate (LiReO4) using rhenium oxide (Re2O7) as a precursor, aiming to enhance the electrical conductivity of the compound, with implications for various material science applications. The iodine variants-incorporated LiReO4 (Iv@LiReO4·H2O) exhibits a notable improvement in the average electrical conductivity (∼ 2 S/cm) and light absorption across a broad spectrum, extending to the near-infrared range. Additionally, the doping process induces resistive switching and synaptic behaviors due to iodine diffusion. The presence of iodine and the partial reduction of Re oxide is confirmed by X-ray photoelectron spectroscopy, while UV-Vis absorption spectroscopy indicates the existence of incorporated iodine variants species. Density functional theory calculations further elucidate the mechanism by which iodine doping triggers a significant enhancement in electrical conductance, primarily by introducing a mixed-valence oxidation state in rhenium, leading to the narrowing of the band gap from 3.68 eV to 0.33 eV. This research suggests potential uses for Iv@LiReO4·H2O in applications to memristive neuromorphic devices. © 2024 Elsevier B.V.
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