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Facile synthesis of iodine variants-incorporated lithium perrhenate crystal and film: Resistive switching device and synaptic behavior

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dc.contributor.authorLee, Sojeong-
dc.contributor.authorAhn, Jong-Guk-
dc.contributor.authorJang, Eejin-
dc.contributor.authorHyun, Gyeongeun-
dc.contributor.authorKim, Jinho-
dc.contributor.authorKim, Hyeonju-
dc.contributor.authorPark, Jumin-
dc.contributor.authorSong, Intek-
dc.contributor.authorLim, Hyunseob-
dc.contributor.authorYoon, Seok Min-
dc.date.accessioned2024-07-19T01:30:19Z-
dc.date.available2024-07-19T01:30:19Z-
dc.date.issued2024-10-
dc.identifier.issn0925-8388-
dc.identifier.issn1873-4669-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/71290-
dc.description.abstractThis study investigates the integration of iodine as a dopant into lithium perrhenate (LiReO4) using rhenium oxide (Re2O7) as a precursor, aiming to enhance the electrical conductivity of the compound, with implications for various material science applications. The iodine variants-incorporated LiReO4 (Iv@LiReO4·H2O) exhibits a notable improvement in the average electrical conductivity (∼ 2 S/cm) and light absorption across a broad spectrum, extending to the near-infrared range. Additionally, the doping process induces resistive switching and synaptic behaviors due to iodine diffusion. The presence of iodine and the partial reduction of Re oxide is confirmed by X-ray photoelectron spectroscopy, while UV-Vis absorption spectroscopy indicates the existence of incorporated iodine variants species. Density functional theory calculations further elucidate the mechanism by which iodine doping triggers a significant enhancement in electrical conductance, primarily by introducing a mixed-valence oxidation state in rhenium, leading to the narrowing of the band gap from 3.68 eV to 0.33 eV. This research suggests potential uses for Iv@LiReO4·H2O in applications to memristive neuromorphic devices. © 2024 Elsevier B.V.-
dc.language영어-
dc.language.isoENG-
dc.publisherElsevier BV-
dc.titleFacile synthesis of iodine variants-incorporated lithium perrhenate crystal and film: Resistive switching device and synaptic behavior-
dc.typeArticle-
dc.publisher.location스위스-
dc.identifier.doi10.1016/j.jallcom.2024.175423-
dc.identifier.scopusid2-s2.0-85198080573-
dc.identifier.wosid001271803700001-
dc.identifier.bibliographicCitationJournal of Alloys and Compounds, v.1002-
dc.citation.titleJournal of Alloys and Compounds-
dc.citation.volume1002-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.subject.keywordAuthorArtificial synapse-
dc.subject.keywordAuthorIodine variants-
dc.subject.keywordAuthorLithium perrhenate-
dc.subject.keywordAuthorMemristor-
dc.subject.keywordAuthorRhenium oxides-
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