Sequential Doping of Carbon Nanotube Wrapped by Conjugated Polymer for Highly Conductive Platform and Thermoelectric Applicationopen access
- Authors
- Choi, Da Eun; Im, Jaemin; Ahn, Yejin; Hwang, Kyoungtae; Kim, Jungwon; Kwon, Ji Eon; Park, Sang Kyu; Choi, Hyun Ho; Kim, Bong-Gi
- Issue Date
- Jan-2024
- Publisher
- WILEY
- Keywords
- CP-CNT hybrids; doping mechanisms; mobilities; molecular dopings; thermoelectric performances
- Citation
- Small Structures, v.5, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- Small Structures
- Volume
- 5
- Number
- 1
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/68287
- DOI
- 10.1002/sstr.202300321
- ISSN
- 2688-4062
- Abstract
- Doping of conjugated polymers (CPs) is a promising strategy to obtain solutionprocessable and highly conductive films; however, the improvement in electrical conductivity is limited owing to the relatively poor carrier mobility of CPs. Herein, a CP with excellent molecular doping ability, i.e., poly[2-([2,2 '-bithiophen]-5-yl)3,8-difluoro-5,10- bis(5-octylpentadecyl)-5,10-dihydroindolo[3,2-b]indole] (PIDFBT) is wrapped onto the surface of single-walled carbon nanotubes (SWCNTs). The resulting PIDF-BT@SWCNT simultaneously achieves excellent solution dispersibility and a high electrical conductivity of over 5000 S cm(-1) through AuCl3 doping. The doping mechanism is systematically studied using spectroscopic analysis, and the four-probe field-effect transistor based on the doped PIDF-BT@SWCNT confirms a carrier mobility up to 138 cm(2) V-1 s(-1). The carriertransfer barrier energy is related to the Schottky barrier between the SWCNT and PIDF-BT, which can be controlled by doping. Finally, when the doped PIDFBT@SWCNT is applied to a thermoelectric device, a power factor exceeding 210 mu Wm(-1) K-2 is achieved because of its high electrical conductivity, even if the increased carrier density reduces the Seebeck coefficient.
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