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Doping of high concentration of Beryllium in GaAs layers by molecular-beam epitaxy
- Authors
- 김기원
- Issue Date
- 17-Jun-2009
- Conference Name
- The 3rd International Symposium on Functional Materials
- Location
- 대한민국
- Conference Date
- 2009-06-15 ~ 2009-06-18
- metadata.conference.dc.citation.conferenceName
- The 3rd International Symposium on Functional Materials
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