Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries
- Choi, Hyun Ho; Paterson, Alexandra F.; Fusella, Michael A.; Panidi, Julianna; Solomeshch, Olga; Tessler, Nir; Heeney, Martin; Cho, Kilwon; Anthopoulos, Thomas D.; Rand, Barry P.; Podzorov, Vitaly
- Issue Date
- WILEY-V C H VERLAG GMBH
- charge transport; hall effect; mobility; organic semiconductors; organic field-effect transistors (OFETs); organic thin-film transistors (OTFTs); polycrystalline films
- ADVANCED FUNCTIONAL MATERIALS, v.30, no.20
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Highly crystalline thin films in organic semiconductors are important for applications in high-performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect and charge transport properties of organic transistors based on two exemplary benchmark systems is elucidated: (1) solution-processed blends of 2,7-dioctylbenzothieno[3,2-b]benzothiophene (C-8-BTBT) small molecule and indacenodithiophene-benzothiadiazole (C16IDT-BT) conjugated polymer, and (2) large-area vacuum evaporated polycrystalline thin films of rubrene (C42H28). It is discovered that, despite the high field-effect mobilities of up to 6 cm(2) V-1 s(-1) and the evidence of a delocalized band-like charge transport, the Hall effect in polycrystalline organic transistors is systematically and significantly underdeveloped, with the carrier coherence factor alpha < 1 (i.e., yields an underestimated Hall mobility and an overestimated carrier density). A model based on capacitively charged grain boundaries explaining this unusual behavior is described. This work significantly advances the understanding of magneto-transport properties of organic semiconductor thin films.
- Files in This Item
- There are no files associated with this item.
- Appears in
- 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.