Effect of sorted, homogeneous electronic grade single-walled carbon nanotube on the electromagnetic shielding effectiveness
- Authors
- Yu, Ilhwan; Ko, Jaehyoung; Kim, Tea-Wook; Lee, Dong Su; Kim, Nam Dong; Bae, Sukang; Lee, Seoung-Ki; Choi, Jaewon; Lee, Sang Seok; Joo, Yongho
- Issue Date
- 15-Oct-2020
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- SWCNT; Electromagnetic interference; Shielding effectiveness; Metallic SWCNT; Semiconducting SWCNT
- Citation
- CARBON, v.167, pp.523 - 529
- Indexed
- SCIE
SCOPUS
- Journal Title
- CARBON
- Volume
- 167
- Start Page
- 523
- End Page
- 529
- URI
- https://scholarworks.bwise.kr/gnu/handle/sw.gnu/6073
- DOI
- 10.1016/j.carbon.2020.06.047
- ISSN
- 0008-6223
- Abstract
- Enhancing the electromagnetic interference (EMI) shielding effectiveness (SH EF) with lightweight materials is a significant challenge. Herein, we introduce the fabrication of a heterogeneous metallic and semiconducting single-walled carbon nanotube (SWCNT) from the current synthetic method into films to optimize EMI SH EF. Because EMI SH EF can be affected by absorption and reflectance attenuation, optimizing the ratio of the metallic or semiconducting nature of SWCNT as a homogeneous electronic grade is critical. We optimized the SWCNT thin film as a homogeneous electronic grade and compared the EMI SH EF performance between them, with mechanistic insights. Specifically, we tuned the ratio of the metallic (m-) and semiconducting (s-) SWCNT in thin film and determined the EMI SH EF. Electronically pure m-SWCNT thin films showed the higher EMI SH EF than s-SWCNT thin film with the comparable tube length. Furthermore, a 1.2 mm thick film of sorted SWCNT exhibited a maximum EMI SH EF of approximately 35 dB with 3 mg of the lightweight film, and the highest normalized specific EMI SH EF (ESE/t), which is the EMI SH EF normalized by the density and thickness of the film, obtained herein was 153,333 dB cm(2) g(-1) in the frequency range of 12-19 GHz. Our findings demonstrate a substantial material design paradigm for the creation of next-generation material for high-performance EMI SH EF. (C) 2020 Elsevier Ltd. All rights reserved. Superscript/Subscript Available
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