Radiation Displacement Defect in Super Junction Insulated Gate Bipolar Transistor (SJ-IGBT)

Abstract

In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations on its DC characteristics, breakdown voltage and power dissipation are carried out via technology computer-aided design (TCAD) simulation. According to the simulation results, the displacement defect decreases the on current. the degradation is the most severe where trap is located at the N-pillar side of the main current path, and this degradation increases with moving of defect location to gate side. For trap energy, the deeper acceptor-like trap energy level caused more deterioration, compared with the shallow trap. Donor-like trap did not have a significant effect on N-pillar as well as P-pillar.