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Current annealing behavior in suspended graphene

Authors
Nam, Youngwoo
Issue Date
Jul-2021
Publisher
한국물리학회
Keywords
Suspended graphene; Current annealing; High quality; High bias; Quantum Hall effect
Citation
Journal of the Korean Physical Society, v.79, no.1, pp 76 - 80
Pages
5
Indexed
SCIE
SCOPUS
KCI
Journal Title
Journal of the Korean Physical Society
Volume
79
Number
1
Start Page
76
End Page
80
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/3539
DOI
10.1007/s40042-021-00221-z
ISSN
0374-4884
1976-8524
Abstract
Current annealing behaviors that directly contribute to excellent electrical transport properties in suspended graphene devices are investigated. All successful annealing data for various thicknesses of graphene exhibit three different stages in current-voltage curves upon bias voltage application: (1) sublinear increase in current, (2) abrupt current decrease, and (3) current saturation. This can be attributed to the phonon effect and the structural deformation of graphene at high temperatures induced by Joule heating. It is observed that cleaning occurred primarily in the last stage when the current becomes saturated.
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자연과학대학 (물리학과)
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