Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
CSL-NOR형 SONOS 플래시 메모리의 멀티비트 적용에 관한 연구Investigation for Multi-bit per Cell on the CSL-NOR Type SONOS Flash Memories
- Other Titles
- Investigation for Multi-bit per Cell on the CSL-NOR Type SONOS Flash Memories
- Issue Date
- 2005
- Publisher
- 한국전기전자재료학회
- Keywords
- SONOS; NOR type flash memory; Common source line; Multi-bit; Charge pumping method; SONOS; NOR type flash memory; Common source line; Multi-bit; Charge pumping method
- Citation
- 전기전자재료학회논문지, v.18, no.3, pp 193 - 198
- Pages
- 6
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 18
- Number
- 3
- Start Page
- 193
- End Page
- 198
- ISSN
- 1226-7945
2288-3258
- Abstract
- NOR type flash 32 x 32 array are fabricated by using the typical 0.35 ㎛ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 융합기술공과대학 > Division of Converged Electronic Engineering > Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.