Growth and microstructure of gallium phosphide nanowires synthesized by the CVD method using copper oxide as a catalyst

Abstract

High purity nanowires are successfully synthesized by chemical vapor deposition. In this work, we have tried synthesis of GaP nanowires with copper oxide catalyst using chemical vapor deposition method involving a metal oxide-assisted vapor-liquid-solid (VLS) growth mechanism. The synthesis process is the same as that described in existing work except for a catalyst. The mixture of Gal? and Ga powder was used as Gal? source for synthesis of Gal? nanowires. And the mixture powder was directly vaporized in the range of 700 similar to 1000 degrees C under argon ambient in a furnace. The wire-like products was observed in the range of 800 similar to 950 degrees C. The diameter of nanowires increases with increasing synthesis temperature, but reversely, the length of nanowires decreases steadily. The nanowires prepared at 850 degrees C possess perfect wire-like shape and uniform distribution of diameter. The average diameter and length of nanowires are about 50nm and 150W, respectively. HRTEM and EDX analysis were carried out to obtain more detailed information of its microstructure. Nevertheless, all condition of processing was set for making the high purity GaP nanowires as existing reported method, the nanowires were identified as well-crystallized gallium oxide nanowires with an amorphous outer layer. It does not accord with existing reported results. This result means that the catalysts play a key role in the growth of nanowires.