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Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory
- Authors
- Lee, S.-E.; Kim, J.-Y.; An, H.-M.; Seo, K.-Y.; Kim, B.
- Issue Date
- 2007
- Keywords
- Charge-trapping medium; Non-volatile memory; Oxide/nitrogen-rich layer/oxide; Re-oxidized nitrided oxide (RONO); SiON
- Citation
- Solid-State Electronics, v.51, no.7, pp 1009 - 1013
- Pages
- 5
- Indexed
- SCOPUS
- Journal Title
- Solid-State Electronics
- Volume
- 51
- Number
- 7
- Start Page
- 1009
- End Page
- 1013
- ISSN
- 0038-1101
1879-2405
- Abstract
- We report on feasibility of a re-oxidized nitrided oxide (RONO) as a charge-trapping medium for non-volatile memory. The RONO is in situ formed by initial oxidation in wet oxygen ambient followed by NO anneal, then re-oxidation in wet O2 ambient, and has an oxide/nitrogen-rich layer/oxide structure. The nitrogen existing in the oxide bulk constitutes SiON bonding, and the nitrogen existing near the new formed Si-SiO2 interface constitutes Si2NO bonding. The SiON bonding due to the non-bonding site of nitrogen buried in the oxide is expected as a main bonding status important to the memory properties. MOS transistors with the RONO show the maximum memory window of 2.5 V and the memory retention of about three-years. ? 2007 Elsevier Ltd. All rights reserved.
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Collections - 융합기술공과대학 > Division of Converged Electronic Engineering > Journal Articles
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