Influence of precursor solution coating parameters on structural and dielectric properties of PZT thick films
- Authors
- Ahn, Byeong-Lib; Lee, Ju; Park, Sang-Man; Lee, Sung-Gap
- Issue Date
- May-2008
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE, v.43, no.10, pp 3408 - 3411
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS SCIENCE
- Volume
- 43
- Number
- 10
- Start Page
- 3408
- End Page
- 3411
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/27410
- DOI
- 10.1007/s10853-007-2253-y
- ISSN
- 0022-2461
1573-4803
- Abstract
- Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol-coating process to the normal screen-printing process to obtain a good densification. The screen-printing procedure was repeated four times to form PZT(70/30) thick films, and then PZT(30/70) precursor solution was spin-coated on the PZT thick films. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The thickness of all thick films was approximately 75-80 mu m. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 656 and 1.2%, respectively. The remanent polarization increased and coercive field decreased with increasing the number of sol coatings and the values of the PZT-6 thick films were 28.3 mu C/cm(2) and 13.1 kV/cm, respectively. Leakage current density of PZT-6 thick films was 2.4 x 10(-9)A/cm(2) at 100 kV/cm.
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Collections - 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

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