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Influence of precursor solution coating parameters on structural and dielectric properties of PZT thick films

Authors
Ahn, Byeong-LibLee, JuPark, Sang-ManLee, Sung-Gap
Issue Date
May-2008
Publisher
SPRINGER
Citation
JOURNAL OF MATERIALS SCIENCE, v.43, no.10, pp 3408 - 3411
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS SCIENCE
Volume
43
Number
10
Start Page
3408
End Page
3411
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/27410
DOI
10.1007/s10853-007-2253-y
ISSN
0022-2461
1573-4803
Abstract
Ferroelectric PZT(70/30) thick films were fabricated by the hybrid technique adding the sol-coating process to the normal screen-printing process to obtain a good densification. The screen-printing procedure was repeated four times to form PZT(70/30) thick films, and then PZT(30/70) precursor solution was spin-coated on the PZT thick films. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The thickness of all thick films was approximately 75-80 mu m. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 656 and 1.2%, respectively. The remanent polarization increased and coercive field decreased with increasing the number of sol coatings and the values of the PZT-6 thick films were 28.3 mu C/cm(2) and 13.1 kV/cm, respectively. Leakage current density of PZT-6 thick films was 2.4 x 10(-9)A/cm(2) at 100 kV/cm.
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