Organic thin-film transistors based on alkoxynaphthalene end-capped divinylbenzeneOrganic Thin-Film Transistors based on Alkoxynaphthalene End-capped Divinylbenzene
- Other Titles
- Organic Thin-Film Transistors based on Alkoxynaphthalene End-capped Divinylbenzene
- Authors
- Kim, Y.; Lee, D.; Park, S.J.; Chen, J.; Yi, M.H.; Kwon, S.K.
- Issue Date
- Sep-2009
- Publisher
- 한국정보디스플레이학회
- Keywords
- Alkoxynaphthalene end group; Organic thin-film transistor; Semiconductor
- Citation
- Journal of Information Display, v.10, no.3, pp 125 - 130
- Pages
- 6
- Indexed
- SCOPUS
KCICANDI
- Journal Title
- Journal of Information Display
- Volume
- 10
- Number
- 3
- Start Page
- 125
- End Page
- 130
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/27106
- DOI
- 10.1080/15980316.2009.9652095
- ISSN
- 1598-0316
2158-1606
- Abstract
- The new organic semiconductor, which is composed of a divinylbenzene core unit and alkoxynaphthalene on both sides, 1,4-bis-2-(6-hexyloxy)naphthalen-2-yl-vinylbenzene, was synthesized via Wittig reaction. The obtained oligomer was characterized via FT-IR, mass and elemental analysis, UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The vacuum-evaporated film was characterized via X-ray diffraction and atomic-force microscopy (AFM). It formed a highly ordered polycrystalline vacuum-evaporated film and exhibited a good field-effect performance, with a hole mobility of 0.015cm2/V?s, an on/off ratio of 1.18×105, and a subthreshold slope of 0.69 V when it was deposited at Ts=90°C on HMDS-treated SiO2. ? 2009 Taylor & Francis Group, LLC.
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Collections - 공과대학 > School of Materials Science&Engineering > Journal Articles
- 자연과학대학 > 화학과 > Journal Articles

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