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인듐량에 따른 InxGaN1-x 박막의 에너지밴드갭 변화Energy-band-gap Variation of InxGaN1-x Thin Films with Indium Composition
- Other Titles
- Energy-band-gap Variation of InxGaN1-x Thin Films with Indium Composition
- Issue Date
- 2009
- Publisher
- 한국전기전자재료학회
- Keywords
- InxGa1-xN alloys; Photoluminescence; Cathodoluminescence; Vegard's law; Bowing parameter
- Citation
- 전기전자재료학회논문지, v.22, no.8, pp 677 - 681
- Pages
- 5
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 22
- Number
- 8
- Start Page
- 677
- End Page
- 681
- ISSN
- 1226-7945
2288-3258
- Abstract
- InxGa1-xN alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at 800 ℃. TMGa, TMIn and NH3 were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in InxGa1-xN films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of InxGa1-xN films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for InxGa1-xN alloys were well fit with a bowing parameter of 2.27.
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