인듐량에 따른 InxGaN1-x 박막의 에너지밴드갭 변화

Abstract

InxGa1-xN alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at 800 ℃. TMGa, TMIn and NH3 were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in InxGa1-xN films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of InxGa1-xN films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for InxGa1-xN alloys were well fit with a bowing parameter of 2.27.