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공정 및 공급전압 변화에 강인한 하프브리지 구동 IC의 설계Design of a Robust Half-bridge Driver IC to a Variation of Process and Power Supply

Other Titles
Design of a Robust Half-bridge Driver IC to a Variation of Process and Power Supply
Authors
송기남김기현서길수장경운한석붕김형우
Issue Date
2009
Publisher
한국전기전자재료학회
Keywords
Half-bridge converter; Half-bridge driver IC; High voltage gate driver; Shoot-through
Citation
전기전자재료학회논문지, v.22, no.10, pp 801 - 807
Pages
7
Indexed
KCI
Journal Title
전기전자재료학회논문지
Volume
22
Number
10
Start Page
801
End Page
807
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/26699
ISSN
1226-7945
2288-3258
Abstract
In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using 1 ㎛ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation.
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공과대학 > 전자공학과 > Journal Articles

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