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공정 및 공급전압 변화에 강인한 하프브리지 구동 IC의 설계
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 송기남 | - |
| dc.contributor.author | 김기현 | - |
| dc.contributor.author | 서길수 | - |
| dc.contributor.author | 장경운 | - |
| dc.contributor.author | 한석붕 | - |
| dc.contributor.author | 김형우 | - |
| dc.date.accessioned | 2022-12-27T05:34:51Z | - |
| dc.date.available | 2022-12-27T05:34:51Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.issn | 1226-7945 | - |
| dc.identifier.issn | 2288-3258 | - |
| dc.identifier.uri | https://scholarworks.gnu.ac.kr/handle/sw.gnu/26699 | - |
| dc.description.abstract | In this paper, we propose a novel shoot-through protection circuit and pulse generator for half-bridge driver IC. We designed a robust half-bridge driver IC over a variation of processes and power supplies. The proposed circuit is composed a delay circuit using a beta-multiplier reference. The proposed circuit has a lower variation rate of dead time and pulse-width over variation of processes and supply voltages than the conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also, the proposed pulse generator is prevented from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, respectively. The variation ratio is 68%(170 ns) of maximum over variation of processes and supply voltages. The proposed circuit is designed using 1 ㎛ 650 V BCD (Bipolar, CMOS, DMOS) process parameter, and the simulations are carried out using Spectre simulator of Cadence corporation. | - |
| dc.format.extent | 7 | - |
| dc.language | 한국어 | - |
| dc.language.iso | KOR | - |
| dc.publisher | 한국전기전자재료학회 | - |
| dc.title | 공정 및 공급전압 변화에 강인한 하프브리지 구동 IC의 설계 | - |
| dc.title.alternative | Design of a Robust Half-bridge Driver IC to a Variation of Process and Power Supply | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.22, no.10, pp 801 - 807 | - |
| dc.citation.title | 전기전자재료학회논문지 | - |
| dc.citation.volume | 22 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 801 | - |
| dc.citation.endPage | 807 | - |
| dc.identifier.kciid | ART001382162 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.subject.keywordAuthor | Half-bridge converter | - |
| dc.subject.keywordAuthor | Half-bridge driver IC | - |
| dc.subject.keywordAuthor | High voltage gate driver | - |
| dc.subject.keywordAuthor | Shoot-through | - |
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