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Structural and electrical properties of vanadium tungsten oxide thin films Grown on Pt/TiO2/SiO2/Si substrates
- Authors
- Nam, Sung-Pill; Lee, Sung-Gap; Lee, Young-Hie
- Issue Date
- Apr-2009
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- Vanadium; Tungsten; Thin film; TCR; Dielectric property
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.10, no.2, pp 224 - 226
- Pages
- 3
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 10
- Number
- 2
- Start Page
- 224
- End Page
- 226
- ISSN
- 1229-9162
2672-152X
- Abstract
- V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by an RF sputtering method exhibited fairly good and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constant of the V1.9W0.1O5 thin film annealed at 300 degrees C was 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300 degrees C were about -3.6%/K
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