Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
저온에서 증착한 CdSe막의 구조적 및 전기적 특성The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature
- Other Titles
- The Structural and Electrical Properties of CdSe Films Deposited at Low Temperature
- Issue Date
- 2010
- Publisher
- 한국전기전자재료학회
- Keywords
- CdSe films; Thermal evaporation; Photosensitivity
- Citation
- 전기전자재료학회논문지, v.23, no.10, pp 776 - 781
- Pages
- 6
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 23
- Number
- 10
- Start Page
- 776
- End Page
- 781
- ISSN
- 1226-7945
2288-3258
- Abstract
- CdSe films were deposited on glass substrates (CdSe/glass) by thermal evaporation. Substrate temperature was lowered by cooling substrate holder with liquid nitrogen. Substrate temperatures were 200℃, 0℃ and -40℃. The crystallographic properties and surface morphologies of the CdSe/glass films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical and electrical properties of the films were investigated by dependence of energy gap, photosensitivity and resistivity on the substrate temperature. CdSe/glass showed energy gap of ～1.72 eV regardless of substrate temperature. The resistivity of the films decreased to 0.5 Ωcm by lowering the substrate temperature to -40℃. The CdSe/glass films prepared at 0℃ showed the highest photosensitivity among the films in this study.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공과대학 > 반도체공학과 > Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.