A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 mu m high voltage (650 V) DIMOS process
- Authors
- Song, Ki-Nam; Kim, Hyoung-Woo; Kim, Ki-Hyun; Seo, Kil-Soo; Han, Seok-Bung
- Issue Date
- Jan-2011
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Half bridge driver; High voltage integrated circuits; High voltage level shifter; Common mode noise; LLC resonant converter
- Citation
- MICROELECTRONICS JOURNAL, v.42, no.1, pp 74 - 81
- Pages
- 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONICS JOURNAL
- Volume
- 42
- Number
- 1
- Start Page
- 74
- End Page
- 81
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/23887
- DOI
- 10.1016/j.mejo.2010.09.002
- ISSN
- 0026-2692
1879-2391
- Abstract
- In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 mu m high voltage (650V) Dielectric Isolation MOS (DIMOS) process. The Designed IC is suitable for medium power (under 500W) applications such as consumer electronics. Half bridge converter driver IC with a novel common mode rejection technique, which is composed of noise filter and set inhibitor, shows high dv/dt noise immunity up to 66.67 V/ns. Spectre simulation was performed to verify the electrical characteristics of the designed IC. (C) 2010 Elsevier Ltd. All rights reserved.
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