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Cited 8 time in webofscience Cited 9 time in scopus
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A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 mu m high voltage (650 V) DIMOS process

Authors
Song, Ki-NamKim, Hyoung-WooKim, Ki-HyunSeo, Kil-SooHan, Seok-Bung
Issue Date
Jan-2011
Publisher
ELSEVIER SCI LTD
Keywords
Half bridge driver; High voltage integrated circuits; High voltage level shifter; Common mode noise; LLC resonant converter
Citation
MICROELECTRONICS JOURNAL, v.42, no.1, pp 74 - 81
Pages
8
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONICS JOURNAL
Volume
42
Number
1
Start Page
74
End Page
81
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/23887
DOI
10.1016/j.mejo.2010.09.002
ISSN
0026-2692
1879-2391
Abstract
In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 mu m high voltage (650V) Dielectric Isolation MOS (DIMOS) process. The Designed IC is suitable for medium power (under 500W) applications such as consumer electronics. Half bridge converter driver IC with a novel common mode rejection technique, which is composed of noise filter and set inhibitor, shows high dv/dt noise immunity up to 66.67 V/ns. Spectre simulation was performed to verify the electrical characteristics of the designed IC. (C) 2010 Elsevier Ltd. All rights reserved.
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공과대학 > 전자공학과 > Journal Articles

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