Characterization of Pb(Zr0.52Ti0.48)O-3/BiFeO3 multilayer thin films prepared by a sol-gel method
- Authors
- Jo, Seo-Hyeon; Lee, Sung-Gap
- Issue Date
- Oct-2012
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- BiFeO3; Pb(Zr, Ti)O-3; Multiferroic; Thin film; Sol-gel method
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.5, pp 631 - 634
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 13
- Number
- 5
- Start Page
- 631
- End Page
- 634
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/22000
- ISSN
- 1229-9162
2672-152X
- Abstract
- Multiferroic Pb(Zr0.52Ti0.48)O-3/BiFeO3 multilayer thin films were fabricated by the spin-coating method on Pt/Ti/SiO2/p-Si(100) substrates alternately using Pb(Zr0.52Ti0.48)O-3 and BiFeO3 metal alkoxide solutions. The PZT/BFO multilayer thin films show the formation of layers and a change of lattice constant caused by different structure of each other. The coating and heating procedure was repeated several times to form Pb(Zr0.52Ti0.48)O-3/BiFeO3 multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without the presence of a second phase such as Bi2Fe4O3. Pb(Zr0.52Ti0.48)O-3/BiFeO3 multilayer films showed a uniform and small grain size rather than pure Pb(Zr0.52Ti0.48)O-3 and BiFeO3 films. We think that the crystal growth of the upper BiFeO3 layers can be influenced by the lower Pb(Zr0.52Ti0.48)O-3 layers, and choosing the initial Pb(Zr0.52Ti0.48)O-3 layer or a seeding layer has controlled the microstructural behavior of the resultant film. Leakage current density of the Pb(Zr0.52Ti0.48)O-3/BiFeO3 multilayer film was 5.74 x 10(-6) A/cm(2) at 150 kV/cm.
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Collections - 공학계열 > Dept.of Materials Engineering and Convergence Technology > Journal Articles

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