Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering
- Authors
- Kang, Il; Yun, Hui-Jun; Chung, Dae Sung; Kwon, Soon-Ki; Kim, Yun-Hi
- Issue Date
- Oct-2013
- Publisher
- American Chemical Society
- Citation
- Journal of the American Chemical Society, v.135, no.40, pp 14896 - 14899
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Journal of the American Chemical Society
- Volume
- 135
- Number
- 40
- Start Page
- 14896
- End Page
- 14899
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/20421
- DOI
- 10.1021/ja405112s
- ISSN
- 0002-7863
1520-5126
- Abstract
- Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V.s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short pi-pi stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.
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- Appears in
Collections - 공과대학 > School of Materials Science&Engineering > Journal Articles
- 자연과학대학 > 화학과 > Journal Articles

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