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Cited 788 time in webofscience Cited 804 time in scopus
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Record High Hole Mobility in Polymer Semiconductors via Side-Chain Engineering

Authors
Kang, IlYun, Hui-JunChung, Dae SungKwon, Soon-KiKim, Yun-Hi
Issue Date
Oct-2013
Publisher
American Chemical Society
Citation
Journal of the American Chemical Society, v.135, no.40, pp 14896 - 14899
Pages
4
Indexed
SCI
SCIE
SCOPUS
Journal Title
Journal of the American Chemical Society
Volume
135
Number
40
Start Page
14896
End Page
14899
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/20421
DOI
10.1021/ja405112s
ISSN
0002-7863
1520-5126
Abstract
Charge carrier mobility is still the most challenging issue that should be overcome to realize everyday organic electronics in the near future. In this Communication, we show that introducing smart side-chain engineering to polymer semiconductors can facilitate intermolecular electronic communication. Two new polymers, P-29-DPPDBTE and P-29-DPPDTSE, which consist of a highly conductive diketopyrrolopyrrole backbone and an extended branching-position-adjusted side chain, showed unprecedented record high hole mobility of 12 cm(2)/(V.s). From photophysical and structural studies, we found that moving the branching position of the side chain away from the backbone of these polymers resulted in increased intermolecular interactions with extremely short pi-pi stacking distances, without compromising solubility of the polymers. As a result, high hole mobility could be achieved even in devices fabricated using the polymers at room temperature.
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