New Bithiophene Extended IDIC-Based Non-Fullerene Acceptors and Organic Photovoltaics Thereofopen access
- Jeong, Yeong Heon; Jeon, Jae Min; Kim, Jun Young; Kim, Yun-Hi
- Issue Date
- non-fullerene acceptors; IDIC; organic photovoltaic
- MOLECULES, v.27, no.3
- Journal Title
- We developed new bithiophene extended electron acceptors based on m-alkoxythenyl-substituted IDIC with three different end groups, named as IDT-BT-IC, IDT-BT-IC4F, and IDT-BT-IC4Cl, respectively. The ultraviolet absorption maximum was redshifted and the bandgap was decreased as the strong electron accepting ability of the end group increased. A differential scanning calorimetry thermogram analysis revealed that all the new acceptors have a crystalline character. Using these acceptors and a bulk heterojunction structure using PBDB-T, inverted organic photovoltaic (OPV) devices were fabricated, and their performance was analyzed. Due to the red shift of the electron acceptors, the OPV active layer particularly, which was derived from IDT-BT-IC4F, exhibited increased absorption at long wavelengths over 800 nm. The OPV prepared using IDT-BT-IC exhibited a short-circuit current density (J(sc)) of 2.30 mA/cm(2), an open-circuit voltage (V-oc) of 0.95 V, a fill factor (FF) of 45%, and a photocurrent efficiency (PCE) of 1.00%. Using IDT-BT-IC4F, the corresponding OPV device showed J(sc) = 8.31 mA/cm(2), V-oc = 0.86 V, FF = 47%, and PCE = 3.37%. The IDT-BT-IC4Cl-derived OPV had J(sc) = 3.00 mA/cm(2), V-oc = 0.89 V, FF = 29%, and PCE = 0.76%. When IDT-BT-IC4F was used as the electron acceptor, the highest J(sc) and PCE values were achieved. The results show that the low average roughness (0.263 nm) of the active layer improves the extraction of electrons.
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- 자연과학대학 > 화학과 > Journal Articles
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