고성능 PCM&DRAM 하이브리드 메모리 시스템open accessHigh Performance PCM&DRAM Hybrid Memory System
- Other Titles
- High Performance PCM&DRAM Hybrid Memory System
- Authors
- 정보성; 이정훈
- Issue Date
- 2016
- Publisher
- 대한임베디드공학회
- Keywords
- Hybrid memory; Page management method; Page prefetching; Memory characteristics
- Citation
- 대한임베디드공학회논문지, v.11, no.2, pp 117 - 123
- Pages
- 7
- Indexed
- KCI
- Journal Title
- 대한임베디드공학회논문지
- Volume
- 11
- Number
- 2
- Start Page
- 117
- End Page
- 123
- URI
- https://scholarworks.gnu.ac.kr/handle/sw.gnu/16437
- DOI
- 10.14372/IEMEK.2016.11.2.117
- ISSN
- 1975-5066
- Abstract
- In general, PCM (Phase Change Memory) is unsuitable as a main memory because it has limitations: high read/write latency and low endurance. However, the DRAM&PCM hybrid memory with the same level is one of the effective structures for a next generation main memory because it can utilize an advantage of both DRAM and PCM. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an access time and write count of PCM by using an effective page replacement. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM access count by around 60% and the PCM write count by 42% given the same PCM size, compared with Clock-DWF algorithm.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 공과대학 > 제어계측공학과 > Journal Articles

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.