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고성능 PCM&DRAM 하이브리드 메모리 시스템open accessHigh Performance PCM&DRAM Hybrid Memory System

Other Titles
High Performance PCM&DRAM Hybrid Memory System
Authors
정보성이정훈
Issue Date
2016
Publisher
대한임베디드공학회
Keywords
Hybrid memory; Page management method; Page prefetching; Memory characteristics
Citation
대한임베디드공학회논문지, v.11, no.2, pp 117 - 123
Pages
7
Indexed
KCI
Journal Title
대한임베디드공학회논문지
Volume
11
Number
2
Start Page
117
End Page
123
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/16437
DOI
10.14372/IEMEK.2016.11.2.117
ISSN
1975-5066
Abstract
In general, PCM (Phase Change Memory) is unsuitable as a main memory because it has limitations: high read/write latency and low endurance. However, the DRAM&PCM hybrid memory with the same level is one of the effective structures for a next generation main memory because it can utilize an advantage of both DRAM and PCM. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an access time and write count of PCM by using an effective page replacement. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM access count by around 60% and the PCM write count by 42% given the same PCM size, compared with Clock-DWF algorithm.
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