Structural and electrical properties of Ni0.79Mn2.21-xCuxO4 thick-film bolometer with addition of copper (Cu) for application in infrared sensors

Abstract

In this study, Ni0.79Mn2.21-xCuxO4 (0 <= x <= 0.15) thick films were coated on alumina substrate using a screening printing technique. All specimens were sintered in air at 1150 degrees C for 6 hr and annealed at 830 degrees C. We investigated structural and electrical properties with variations of Cu amount. The results from using a screening printing technique have been shown that all specimens were in a cubic spinel phase formation without any second phase. Our study also found that the electrical resistivity at room temperature and the TCR were decreased as the Cu amount was increased. The Ni0.79Mn2.11Cu0.10O4 thick film showed higher electrical properties than any other Ni0.79Mn2.21-xCuxO4 thick film. The resistance at room temperature, TCR, responsivity and detectivity of Ni0.79Mn2.11Cu0.10O4 thick films were 353 Omega-cm and 3.61%/degrees C, 0.0212 V/W and 1.25 x 10(4) cmHz(1/2)/W, respectively.