Structural and electrical properties of Zn1.10CuxMn1.90-xO4 (0 ae<currency> x ae<currency> 0.15) for application in IR detectors

Abstract

In this study, Zn1.10CuxMn1.90-xO4 (0 <= x <= 0.15) systems were prepared through the conventional solid state reaction method. All specimens were sintered in air at 1200 A degrees C for 12 h and cooled at a rate of 2 A degrees C/min to 800 A degrees C, subsequently quenching to room temperature. Structural investigations were carried out using X-ray diffraction patterns and energy dispersive spectrometry. For x >= 0.10, formation of a tetragonal phase with a Zn-rich Zn-Cu-Mn-O segregated second phase was observed. In the microstructure, the grain size increased from 5.10 mu m to 9.68 mu m with an increase in Cu content. The resistivity at room temperature, B-value, responsivity and detectivity of the Zn1.10Cu0.05Mn1.85O4 specimen were found to be 300.2 k Omega center dot cm, 4665, 0.025 V/W, and 2.12 x10(4) cmHz(1/2)/W, respectively.