Electrical Properties of Co- and Cu-Doped Nickel Manganite System Thick Films for Infrared Detectors

Abstract

Ni0.79Co0.15-xCuxMn2.06O4 (0 <= x <= 0.09) thick films were fabricated using the conventional solid-state reaction method and screenprinting method. Structural and electrical properties of specimens based on the amount of Cu were observed in order to investigate their applicability in the infrared detector. All specimens showed a single spinel phase with a homogeneous cubic structure. As the amount of Cu increased, the average grain size increased and was found to be approximately 5.01 mu m for the Ni0.79Co0.06Cu0.09Mn2.06O4 specimen. The thickness of all specimens was approximately 55 similar to 56 mu m. As Cu content increased, the resistivity and TCR properties at room temperature decreased, and these values for the Ni0.79Co0.06Cu0.09Mn2.06O4 specimen were 502 Omega-cm and -3.32%/degrees C, respectively. The responsivity and noise properties decreased with an increase in Cu content, with the specimen with a Cu content of x=0.09 showing 0.0183 V/W and 5.21x10(-5) V, respectively.