Detailed Information

Cited 20 time in webofscience Cited 20 time in scopus
Metadata Downloads

Directionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics

Full metadata record
DC Field Value Language
dc.contributor.authorKim, Yebyeol-
dc.contributor.authorBae, Jaehyun-
dc.contributor.authorSong, Hyun Woo-
dc.contributor.authorAn, Tae Kyu-
dc.contributor.authorKim, Se Hyun-
dc.contributor.authorKim, Yun-Hi-
dc.contributor.authorPark, Chan Eon-
dc.date.accessioned2022-12-26T18:20:15Z-
dc.date.available2022-12-26T18:20:15Z-
dc.date.issued2017-11-
dc.identifier.issn1944-8244-
dc.identifier.issn1944-8252-
dc.identifier.urihttps://scholarworks.gnu.ac.kr/handle/sw.gnu/13345-
dc.description.abstractElectrohydrodynamic-jet (EHD-jet) printing provides an opportunity to directly assembled amorphous polymer chains in the printed pattern. Herein, an EHD-jet printed amorphous polymer was employed as the active layer for fabrication of organic field-effect transistors (OFETs). Under optimized conditions, the field-effect mobility (mu(FET)) of the EHD-jet printed OFETs was 5 times higher than the highest mu(FET) observed in the spin-coated OFETs, and this improvement was achieved without the use of complex surface templating or additional pre- or post-deposition processing. As the chain alignment can be affected by the surface energy of the dielectric layer in EHD-jet printed OFETs, dielectric layers with varying wettability were examined. Near-edge X-ray absorption fine structure measurements were performed to compare the amorphous chain alignment in OFET active layers prepared by EHD-jet printing and spin coating.-
dc.format.extent9-
dc.language영어-
dc.language.isoENG-
dc.publisherAmerican Chemical Society-
dc.titleDirectionally Aligned Amorphous Polymer Chains via Electrohydrodynamic-Jet Printing: Analysis of Morphology and Polymer Field-Effect Transistor Characteristics-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1021/acsami.7b04316-
dc.identifier.scopusid2-s2.0-85034667767-
dc.identifier.wosid000416203800041-
dc.identifier.bibliographicCitationACS Applied Materials & Interfaces, v.9, no.45, pp 39493 - 39501-
dc.citation.titleACS Applied Materials & Interfaces-
dc.citation.volume9-
dc.citation.number45-
dc.citation.startPage39493-
dc.citation.endPage39501-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusCHARGE-TRANSPORT-
dc.subject.keywordPlusCONJUGATED POLYMERS-
dc.subject.keywordPlusPATTERN-FORMATION-
dc.subject.keywordPlusEFFECT MOBILITY-
dc.subject.keywordPlusRESOLUTION-
dc.subject.keywordPlusPENTACENE-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusCRYSTALLINITY-
dc.subject.keywordPlusEVAPORATION-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordAuthororganic field-effect transistor (OFET)-
dc.subject.keywordAuthorelectrohydrodynamic-jet printing (EHD-jet printing)-
dc.subject.keywordAuthorsurface treatment-
dc.subject.keywordAuthornear-edge X-ray absorption fine structure (NEXAFS)-
dc.subject.keywordAuthordirectional chain alignment-
Files in This Item
There are no files associated with this item.
Appears in
Collections
자연과학대학 > 화학과 > Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Yun Hi photo

Kim, Yun Hi
자연과학대학 (화학과)
Read more

Altmetrics

Total Views & Downloads

BROWSE