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마이크로웨이브 응용을 위한 솔-젤법으로 제작한 K(Ta0.6Nb0.4)O3 박막의 유전 특성Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications
- Other Titles
- Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications
- Issue Date
- 2018
- Publisher
- 한국전기전자재료학회
- Keywords
- Tunability; K(Ta; Nb)O3; Double layer structure; Dielectric properties; Sol-gel method
- Citation
- 전기전자재료학회논문지, v.31, no.6, pp 403 - 407
- Pages
- 5
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 31
- Number
- 6
- Start Page
- 403
- End Page
- 407
- ISSN
- 1226-7945
2288-3258
- Abstract
- In this study, double layer KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, their structural andelectrical properties were measured according with the number of STO coatings, and their applicability to microwavematerials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thinfilm was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectricconstant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of thedielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximumvalue of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.
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