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온도에 따른 InZnP/ZnSe/ZnS (핵/다중껍질) 양자점의 형광 특성 변화The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots
- Other Titles
- The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots
- Issue Date
- 2018
- Publisher
- 한국전기전자재료학회
- Keywords
- InP; Quantum dots; Photoluminescence; Temperature
- Citation
- 전기전자재료학회논문지, v.31, no.7, pp 443 - 449
- Pages
- 7
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 31
- Number
- 7
- Start Page
- 443
- End Page
- 449
- ISSN
- 1226-7945
2288-3258
- Abstract
- We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperaturedependentphotoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks,thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of bandgapshifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversiblephotoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelledInZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.
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