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Cited 17 time in webofscience Cited 18 time in scopus
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Engineered Surface Halide Defects by Two-Dimensional Perovskite Passivation for Deformable Intelligent Photodetectors

Authors
Kim, TaeheeJeong, SeongsikKim, Kyeong-HwanShim, HyunseokKim, DonghoKim, Hae-Jin
Issue Date
8-Jun-2022
Publisher
AMER CHEMICAL SOC
Keywords
perovskite photodetectors; mixed-halide perovskites; halide segregation; surface passivation; deformable photodetectors
Citation
ACS APPLIED MATERIALS & INTERFACES, v.14, no.22, pp 26004 - 26013
Pages
10
Indexed
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
14
Number
22
Start Page
26004
End Page
26013
URI
https://scholarworks.gnu.ac.kr/handle/sw.gnu/1170
DOI
10.1021/acsami.2c03089
ISSN
1944-8244
1944-8252
Abstract
As attractive photoactive materials, metal halide perovskites demonstrate outstanding performance in a wide range of optoelectronic applications. Among the various compositions studied, mixed-halide perovskites have a finely tunable band gap that renders them desirable for targeted applications. Despite their advantages, photoinduced halide segregation often deters the photoelectric stability of the materials. Herein, we adopt a strategy of post-treating the perovskite surface with an organic spacer to generate a two-dimensional (2D) perovskite passivating layer. Trap-assisted recombination pathways can be selectively modulated by passivating the surface halide defects that cause photoinduced halide segregation. Fluorescence lifetime imaging of flat and bent surfaces of perovskites reveals that the perovskite lattice tolerates mechanical strain via the neutralizing passivation of ionic halide defects. Upon bending, the photocurrent response of the flexible photodetector is maintained over 83% for 2D passivated perovskite and drops to 23% for pristine perovskite. A flexible photodetector array built with 2D passivated perovskite, in combination with a deep learning algorithm, demonstrates excellent accuracy in determining letters of the alphabet for both flat (>96%) and bent (>93%) states. The connection of chemically modified charge carrier dynamics and mechanical properties revealed in this study offers valuable guidance for developing next-generation optoelectronic applications.
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