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Channel Length Dependence of Effective Barrier Height Experienced by Charge Carriers in Schottky-Barrier Transistors Based on Si-Nanowire Arraysopen access

Jeon, Dae-Young; Park, So Jeong; Pregl, Sebastian; Trommer, Jens; Heinzig, Andre; Mikolajick, Thomas; Weber, Walter M.

ArticleIssue Date2025CitationIEEE Journal of the Electron Devices Society, v.13, pp 168 - 172PublisherInstitute of Electrical and Electronics Engineers Inc.
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