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A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

ArticleIssue Date2018CitationSOLID-STATE ELECTRONICS, v.140, pp 8 - 11PublisherPERGAMON-ELSEVIER SCIENCE LTD
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