ScholarWorks@Gyeongsang National University: Lee, Sung Gap

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Lee, Sung Gap (이성갑)

대학원 (나노신소재융합공학과)

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Tel 0557721687
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Electrical properties:17||Solgel method:13||Ceramics:13||Dielectric properties:12||Structural properties:12||Electrocaloric effect:11||Piezoelectric properties:11||Leadfree:10||Dielectric constant:10||Thin film:8||Solgel:8||Hysteresis loop:7||TCR:6||SOFC:5||thick films:5||Xray diffraction:5||Responsivity:5||(La:5||solgel:5||ferroelectric:5||Mixedoxide method:5||Ferroelectricity:4||YBCO:4||Ferroelectric:4||BaTiO3:4||piezoelectric properties:4||AAO:4||Thin films:4||NKNBZT:4||PZT:4||Semiconducting YBCO:3||Sintering temperature:3||Bvalue:3||Screenprinting:3||MPB:3||perovskite:3||Ionic conductivity:3||K(Ta:3||EDM:3||Thermistors:3||IR detector:3||Multilayer film:3||Electrocaloric effect:3||Solidstate reaction method:3||Electrical Properties:3||KTN:3||Piezoelectric constant:3||Hopping conduction:3||dielectric constant:3||dielectric properties:3||Impedance Spectroscopy:3||Anodic Aluminum Oxide:3||Sr)MnO3:3||Impedance spectroscopy:3||CSZT:3||screenprinting:3||Thick films:3||Thick film:3||Apatite:2||Multilayer films:2||Hybrid supercapacitor:2||Chemical sensor:2||NKN:2||Temperature sensors:2||Thermistor:2||Thick Film:2||Thin Film:2||NKNLST:2||NKNLSTMnO_2:2||NTCR:2||Infrared detector:2||Biosensor:2||ZnCoMn oxide:2||Nb)O3:2||ZnO:2||Crystal structure:2||Negative temperature coefficient:2||Ionic Conductivity:2||Ni0.79Co0.15xCuxMn2.06O4:2||Bismuth ferrite:2||CuO:2||densification:2||Cubic spinel:2||Aerosol Deposition:2||Perovskites:2||Piezoelectric:2||Anodic aluminum oxide:2||ferroelectrics:2||Detectivity:2||Hopping:2||Potassium tantalite niobate:2||Lanthanum silicate:2||leadfree:2||Lead free:2||Resistivity:2||pH Sensor:2||Li4Ti5O12:2||pyroelectric properties:2||sintering temperature:2||H2Ti12O25:2||Solgel method:2||thin film:2||BFO:2||NKNBCT:1||NKNBNTBT:1||NKNLS plus ZnO:1||NKNLSTCuO:1||Na doping:1||Nanocomposite:1||Nanostructures:1||Nb)O3/BaTiO3:1||Nd:1||NiMn oxide:1||NiMnCo oxide:1||NiMnCu oxide:1||Oxides:1||PST:1||Pb(Zr, Ti)O3:1||Pb1.1(Zr0.52Ti0.48)O3:1||Percolation:1||Phosphoric acid:1||Piezoelectricity:1||Polarization:1||PostAnnealing:1||Potassium Tantalite Niobate:1||Potassium tantalate niobate:1||Provskite:1||Pyroelectric:1||RF magnetron sputtering:1||RFSputter:1||Ragone plot:1||Remanent polarization:1||SCT:1||Screen printing:1||Screening printing:1||Seeding layer:1||SolGel Method:1||Solgel growth:1||Solgel Method:1||Solid Electrolyte:1||Solid oxide electrolyte:1||Solid state reaction method:1||Spin coating:1||SpinCoating:1||Spinel:1||Spinel Cubic:1||Sputtering:1||Sr:1||Sr) MnO3:1||Surface modified:1||Swollen phenomenon:1||Temperature of coefficient of resistance:1||Thermal Runaway:1||Thermistor.:1||Tunability:1||Tungsten:1||Uniaxial press:1||Vanadium:1||XRay Diffraction:1||Xray Diffraction:1||Xray photoelectron spectroscopy:1||XPS:1||ZnMnCuO:1||ZnMnO oxide:1||ZnO Varistors:1||ZnO film:1||ZnxMn3xO4:1||Zr doping:1||aerosol deposition (AD):1||antireflection coating:1||atomic force microscope:1||biosensor:1||capacitive EIS:1||detectivity:1||dielectric strength:1||dielectricproperty:1||diffusion:1||domain structure:1||electrical properties:1||electrocaloric effect:1||embedded capacitor:1||energy storage materials:1||ferroelectric properties:1||films:1||growth angle:1||hammering effect:1||heterolayer:1||highTc:1||impedance spectroscopy:1||ionic conductivity:1||microstructure:1||multilayer:1||nanoindentation:1||oxidation:1||pH:1||pH sensors:1||piezoelectric constant:1||porosity:1||powder metallurgy:1||precursor solution:1||remanent polarization:1||responsivity:1||solgel method:1||solgel preparation:1||solgel processes:1||solar cell:1||solid state reaction method:1||spincoating:1||superconductors:1||tensile strength:1||thick film:1||thick/thin film:1||thin films:1||tunability:1||(Ba:1||αAlumina:1||(Ba,Sr)TiO3 thin films:1||(Ca0.7Sr0.3)(Zr0.8Ti0.2)O3:1||(La0.7Sr0.3)(Mn1xFex)O3 films:1||(Na:1||(Na,K)NbO3:1||0.98NKN0.02LST:1||AAO template:1||Activated Carbon:1||Activation energy:1||Aerosol Deposition Method:1||Aerosol deposition:1||Ag2O:1||Aluminum:1||Anodic Aluminium Oxide:1||Anodic aluminium oxide:1||Apatitetype:1||Arrhenius plot:1||BNT:1||BT:1||BTO:1||Ba(Sr,Ti)O3:1||BaTiO3/La0.7Sr0.3MnOs/BaTiO3:1||Barium Titanate:1||BiFeO3:1||Biosenor:1||Buffer Layer:1||Buffer layer:1||Ca)TiO3:1||Capacitance:1||Capacitive EIS:1||Capacity Loss:1||Cathode Material:1||Cation distribution:1||Ce)SrMnO3:1||Cold isostatical press:1||Crystallization:1||Cycling behavior:1||Cylindrical Hybrid Supercapacitor:1||Cylindrical hybrid supercapacitor:1||Cylindrical supercapacitor:1||Dielectric:1||Dielectric loss:1||Dielectric property:1||Dielectrics:1||Double layer structure:1||EIM:1||Electrical Resistivity:1||Electrical conductivity:1||Electrical resistivity:1||Electrochemical Performance:1||Electrochemical Properties:1||Electrochemical properties:1||Electrolyte:1||ElectrolyteDielectricMetal:1||Electromechanical coupling factor:1||Electron microscopy:1||Electron microscopy(SEM):1||Embedded Capacitor:1||Etching:1||FDE:1||Ferroelectric effect:1||Ferroelectric properties:1||Ferroelectrics:1||Fracture toughness:1||Fuse:1||Hardness:1||Heterolayer thin films:1||Heterolayered:1||Hopping transport:1||Hysteresis:1||IR detection:1||Infrared sensor:1||Interdigital Capacitor:1||Interface properties:1||Inversion parameter:1||K(Ta,Nb)O3:1||K(Ta,Nb)O3 thin films:1||K(Ta0.6Nb0.4)O3:1||K(Ta0.70Nb0.30)O3/K(Ta0.55Nb0.45)O3 heterolayer films:1||K(Ta0.80Nb0.20)O3:1||K)NbO3:1||KNK:1||La(Sr,Ca)MnO3:1||La0.7Sr0.3xBixMnO3 films:1||La7.33Bi2(SiO4)6O2:1||La9.33(Si5V1)O26:1||Lead Zirconate Titanate:1||Lead zirconate titanate:1||LiFePO4/C:1||Life Cycle:1||Limit Voltage:1||MLCC:1||Microwave tunable devices:1||MixedOxide Method:1||Mixing:1||Morphology:1||Multiferroic:1||Multilayer:1||Multilayer Film:1||Multilayer thin film:1||Multilayer thin films:1||NKLNBZT:1||

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