Enhancing the Resistive Switching Properties of Transparent HfO<sub>2</sub>-Based Memristor Devices for Reliable Gasistor Applications
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초록

We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 10(4) s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device's reliability for gasistor applications.

키워드

transparent memristorgasistor applicationresistive switchingroughness of BERANDOM-ACCESS MEMORYTEMPERATUREGROWTH
제목
Enhancing the Resistive Switching Properties of Transparent HfO<sub>2</sub>-Based Memristor Devices for Reliable Gasistor Applications
저자
Kim, TaegiLee, DoowonChae, MyoungsuKim, Kyeong-HeonKim, Hee-Dong
DOI
10.3390/s24196382
발행일
2024-10
유형
Article
저널명
Sensors
24
19