Adsorption behavior of furan at Ge(100) surface

  • Nam, J.-W.
  • Lee, H.-K.
  • Kim, B.-S.
  • Gwag, J.S.
  • Kim, Y.
  • 외 1명
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초록

The adsorption behavior of furan on the Ge(100) surface was studied using a combination of high-resolution photoemission spectroscopy (HRPES) and density functional theory (DFT) calculations. We identified the two adsorption species produced by the [4 + 2] cycloaddition and deoxygenation reactions of furan with the Ge(100) surface in a ratio of approximately 76:24 at the surveyed coverages, via an analysis of the binding energies and relative area proportions of all the peaks in the C 1s and O 1s core-level spectra. The DFT simulation results revealed that the [4 + 2] cycloaddition and deoxygenation adducts are thermodynamically preferred by the reaction of furan with the Ge(100) surface compared with others, which is consistent with the HRPES results. The findings will further our understanding of the surface reactions of five-membered heterocyclic molecules. © 2023, The Author(s).

키워드

SEMICONDUCTOR SURFACESX-1 SURFACETHIOPHENECHEMISORPTIONDECOMPOSITIONCHEMISTRYGE(001)ENERGYH2O
제목
Adsorption behavior of furan at Ge(100) surface
저자
Nam, J.-W.Lee, H.-K.Kim, B.-S.Gwag, J.S.Kim, Y.Youn, Y.-S.
DOI
10.1038/s41598-023-34843-z
발행일
2023-05
유형
Article
저널명
Scientific Reports
13
1