Electrical Properties of Semiconducting YBa2Cu3O7-x Thin Film for Uncooled Infrared Detectors

초록

Uncooled pyroelectric infrared based on semiconducting YBa2Cu3O6+x (YBCO) thin films have been investigated. YBCO precursor solutions were prepared by sol-gel method and YBCO films were fabricated by the spin coating method and structural and electrical properties with variation of annealing temperature were studied. As a result of the differential thermal analysis and thermogravimetry (DTA-TG) analysis, endothermic peak was observed at around 750 degrees C due to the formation of the tetragonal phase. The crystal structure of the YBCO film annealed at 750 degrees C was polycrystalline tetragonal phase. The thickness of all the films was approximately 0.26 approximate to 0.31m and average grain size of the YBCO film sintered at 750 degrees C was about 60nm. Temperature resistance coefficient (TCR), responsivity and detectivity of the YBCO film sintered at 750 degrees C were 3.7%/K at room temperature, 14.47V/W and 7.23 x 10(6) cm Hz(1/2)/W, respectively.

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