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Crystallization-Driven Stable Resistive Switching and Reproducible Synaptic Learning in GeSe-Based Artificial Synapses
- Kamble, Girish U.;
- Kundale, Somnath S.;
- Malavekar, Dhanaji;
- Patil, Vijay B.;
- Dongale, Tukaram D.;
- ... Park, Jun Hong;
- 외 1명
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0초록
The rising demand for high-performance, energy-efficient neuromorphic systems has driven the exploration of chalcogenide materials with tunable electronic properties. Here, Ag/GeSe/FTO resistive-switching devices are demonstrated that exhibit Pavlovian associative learning, mimicking classical conditioning through paired electrical stimuli and voltage-dependent adaptation. Amorphous and crystalline GeSe thin films deposited by RF sputtering were systematically compared. Structural analysis confirmed that annealing at 375 degrees C induces phase crystallization with improved grain integrity and stoichiometric uniformity. Crystalline devices show superior performance, featuring lower SET/RESET voltages, larger hysteresis windows, endurance exceeding 4000 cycles, and retention over 1500 s. Conduction analysis reveals a transition from ohmic to a space-charge-limited transport-mediated mechanism in crystalline GeSe, enabling controlled Ag+ ion migration along grain boundaries, leading to confined filament formation and stable rupture dynamics, which significantly enhance switching uniformity and analog synaptic behavior. Neuromorphic behavior includes stable potentiation, depression, paired-pulse facilitation, and inhibition of long-term potentiation, all demonstrating adaptive and nonlinearly tunable learning. Associative learning, analogous to classical conditioning, was successfully reproduced across multiple cycles. Furthermore, an artificial neural network (ANN) implemented using experimentally extracted long-term potentiation/depression characteristics achieved classification accuracies of similar to 73% and similar to 87% for the Fashion-MNIST and digit-MNIST data sets at 0.9 V, improving to similar to 75% and similar to 87% at 1.1 V. These results firmly establish crystalline GeSe as a promising, stable, and cost-effective memristive material for energy-efficient neuromorphic and artificial-intelligence hardware applications.
키워드
- 제목
- Crystallization-Driven Stable Resistive Switching and Reproducible Synaptic Learning in GeSe-Based Artificial Synapses
- 저자
- Kamble, Girish U.; Kundale, Somnath S.; Malavekar, Dhanaji; Patil, Vijay B.; Dongale, Tukaram D.; Park, Jun Hong; Kim, Jin Hyeok
- 발행일
- 2026-06
- 유형
- Article
- 권
- 18
- 호
- 22
- 페이지
- 31542 ~ 31555