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Si film electrodes containing surface-modified Cu current collectors prepared by a low temperature oxidation-reduction process
- Cho, Gyu-Bong;
- Jeong, Jae-Seung;
- Im, Yeon-Min;
- Choi, Hyon-Kwang;
- Noh, Jung-Pil;
- ... Ahn, Hyo-Jun;
- ... Nam, Tae-Hyun;
- 외 2명
WEB OF SCIENCE
1SCOPUS
1초록
A low-temperature oxidation-reduction process was used to modify the surface of a Cu current collector (foil) for a Si film electrode. The surfaces of the modified Cu foils were investigated under various oxidation-reduction conditions, and the electrochemical properties of Si film electrodes containing the surface modified foils were evaluated. Various nanostructures were found to have formed on the surface; for example, Cu(OH)(2) needles, CuO flowers, and CuO plates formed on Cu-foil surfaces oxidized at 313 K for 1, 10, and 30 min, respectively. Furthermore, these nanostructures were transformed to coral-like Cu2O structures after reduction at 673 K. The amount of Cu2O and the surface roughness decreased on increasing reduction time. The Si film electrode containing a Cu foil reduced for 6 h showed the best electrochemical performance (83.5% of the initial efficiency and 74.8% of capacity retention) due to the small amount of Cu2O and the formation of coral-like structures. (C) 2016 Elsevier Ltd. All rights reserved.
키워드
- 제목
- Si film electrodes containing surface-modified Cu current collectors prepared by a low temperature oxidation-reduction process
- 저자
- Cho, Gyu-Bong; Jeong, Jae-Seung; Im, Yeon-Min; Choi, Hyon-Kwang; Noh, Jung-Pil; Kim, Jae-Kwang; Ahn, Hyo-Jun; Nam, Tae-Hyun; Kim, Ki-Won
- 발행일
- 2016-10
- 유형
- Article
- 저널명
- Vacuum
- 권
- 132
- 페이지
- 130 ~ 137