온도에 따른 InZnP/ZnSe/ZnS (핵/다중껍질) 양자점의 형광 특성 변화

The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots

초록

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperaturedependentphotoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks,thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of bandgapshifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversiblephotoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelledInZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

키워드

InP; Quantum dots; Photoluminescence; Temperature
제목
온도에 따른 InZnP/ZnSe/ZnS (핵/다중껍질) 양자점의 형광 특성 변화
제목 (타언어)
The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots
저자
손민지; 정현성; 이윤기; 구은회; 방지원
DOI
10.4313/JKEM.2018.31.7.443
발행일
2018-11
저널명
전기전자재료학회논문지
권
31
호
7
페이지
443 ~ 449