A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 mu m high voltage (650 V) DIMOS process

  • Song, Ki-Nam
  • Kim, Hyoung-Woo
  • Kim, Ki-Hyun
  • Seo, Kil-Soo
  • Han, Seok-Bung
Citations

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Citations

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10

초록

In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 mu m high voltage (650V) Dielectric Isolation MOS (DIMOS) process. The Designed IC is suitable for medium power (under 500W) applications such as consumer electronics. Half bridge converter driver IC with a novel common mode rejection technique, which is composed of noise filter and set inhibitor, shows high dv/dt noise immunity up to 66.67 V/ns. Spectre simulation was performed to verify the electrical characteristics of the designed IC. (C) 2010 Elsevier Ltd. All rights reserved.

키워드

Half bridge driverHigh voltage integrated circuitsHigh voltage level shifterCommon mode noiseLLC resonant converter
제목
A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 mu m high voltage (650 V) DIMOS process
저자
Song, Ki-NamKim, Hyoung-WooKim, Ki-HyunSeo, Kil-SooHan, Seok-Bung
DOI
10.1016/j.mejo.2010.09.002
발행일
2011-01
유형
Article
저널명
Microelectronics
42
1
페이지
74 ~ 81