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CSL-NOR형 SONOS 플래시 메모리의 멀티비트 적용에 관한 연구
Investigation for Multi-bit per Cell on the CSL-NOR Type SONOS Flash Memories
- 김주연;
- 김병철;
- 서광열;
- 안호명;
- 이명식
초록
NOR type flash 32 x 32 array are fabricated by using the typical 0.35 ㎛ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.
키워드
SONOS; NOR type flash memory; Common source line; Multi-bit; Charge pumping method; SONOS; NOR type flash memory; Common source line; Multi-bit; Charge pumping method
- 제목
- CSL-NOR형 SONOS 플래시 메모리의 멀티비트 적용에 관한 연구
- 제목 (타언어)
- Investigation for Multi-bit per Cell on the CSL-NOR Type SONOS Flash Memories
- 저자
- 김주연; 김병철; 서광열; 안호명; 이명식
- 발행일
- 2005
- 저널명
- 전기전자재료학회논문지
- 권
- 18
- 호
- 3
- 페이지
- 193 ~ 198
- 출판사
- 한국전기전자재료학회
- 발행국가
- 대한민국
- 분량
- 6 페이지
- ISSN
- E 2288-3258
P 1226-7945